Patent · US Active

SRAM well-tie with an uninterrupted grated first poly and first contact patterns in a bit cell array

US9741724B2 · kind B2 · utility

25Cited by

2References

16Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Anand Seshadri · Plano, US
Steve Prins · Fairview, US
Russell Carlton McMullan · Austin, US

Key dates

Filing date	Oct 28, 2015
Grant date	Aug 22, 2017
Priority date	—
Expiry date	Oct 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10B10/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.