Inventor · Plano, TX, US

Anand Seshadri

34Patents
8h-index
28Co-inventors
75Inventor score

Filing activity: Oct 8, 1997 → Oct 29, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9741724B2 SRAM well-tie with an uninterrupted grated first poly and first contact patterns in a bit cell array Electricity 25 Active
US7133304B2 Method and apparatus to reduce storage node disturbance in ferroelectric memory Physics 24 Expired
US6730950B1 Local interconnect using the electrode of a ferroelectric Electricity 23 Expired
US8325511B2 Retain-till-accessed power saving mode in high-performance static memories Physics 19 Active
US6980459B2 Non-volatile SRAM Physics 18 Expired
US8218376B2 Reduced power consumption in retain-till-accessed static memories Physics 17 Active
US6091114A Method and apparatus for protecting gate oxide from process-induced charging effects Electricity 13 Expired
US6965520B1 Delay system for generating control signals in ferroelectric memory devices Physics 9 Expired
US8560931B2 Low power retention random access memory with error correction on wake-up Electricity 8 Active
US6103561A Depletion mode MOS capacitor with patterned V.sub.T implants Electricity 8 Expired
US5986314A Depletion mode MOS capacitor with patterned V.sub.t implants Electricity 7 Expired
US7200027B2 Ferroelectric memory reference generator systems using staging capacitors Physics 5 Expired
US7301795B2 Accelerated low power fatigue testing of FRAM Physics 4 Expired
US7985990B2 Transistor layout for manufacturing process control Electricity 3 Active
US9576621B2 Read-current and word line delay path tracking for sense amplifier enable timing Physics 3 Active
US8971138B2 Method of screening static random access memory cells for positive bias temperature instability Physics 3 Active
US8394681B2 Transistor layout for manufacturing process control Electricity 3 Active
US8654562B2 Static random access memory cell with single-sided buffer and asymmetric construction Electricity 3 Active
US8159863B2 6T SRAM cell with single sided write Physics 2 Active
US6348370B1 Method to fabricate a self aligned source resistor in embedded flash memory applications Electricity 2 Expired
US8301431B2 Apparatus and method for accelerating simulations and designing integrated circuits and other systems Physics 2 Active
US8184474B2 Asymmetric SRAM cell with split transistors on the strong side Physics 2 Active
US8724375B2 SRAM cell having an N-well bias Physics 2 Active
US10631248B2 Mid-cycle adjustment of internal clock signal timing Emerging Cross-Sectional Technologies 2 Active
US8379434B2 SRAM cell for single sided write Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.