Dual metal interconnect structure
US9741812B1 · kind B1 · utility
22Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Feb 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Source/drain contact structures that exhibit low contact resistance and improved electromigration properties are provided. After forming a first contact conductor portion comprising a metal having a high resistance to electromigration such as tungsten at a bottom portion of source/drain contact trench to form direct contact with a source/drain region of a field effect transistor, a second contact conductor portion comprising a highly conductive metal such as copper or a copper alloy is formed over the first contact conductor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.