Method for forming metal oxide semiconductor device
US9741830B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Apr 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and a part thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.