Semiconductor device and method for forming the same
US9741850B1 · kind B1 · utility
6Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a substrate, a gate electrode, a source and a drain, and a buried gate dielectric layer is disclosed. The buried gate dielectric layer is disposed below said gate electrode and protrudes therefrom to said drain, thereby separating said gate electrode and said drain by a substantial distance to reduce gate induced drain leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.