Amorphous silicon semiconductor TFT backboard structure

US9741858B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Xiaowen Lv · Nanhu, CN
• Chihyu Su · Tangxia, CN
• Yanhong Meng · Nanhu, CN
• Wenlin Mei · Beijing, CN

Key dates

• Filing date: Oct 13, 2015
• Grant date: Aug 22, 2017
• Expiry date: Mar 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6746

Abstract

The present invention provides an amorphous silicon semiconductor TFT backboard structure, which includes a semiconductor layer (4) that has a multi-layer structure including a bottom amorphous silicon layer (41) in contact with a gate insulation layer (3), an N-type heavily-doped amorphous silicon layer (42) in contact with a source electrode (6) and a drain electrode (7), at least two N-type lightly-doped amorphous silicon layers (43) sandwiched between the bottom amorphous silicon layer (41) and the N-type heavily-doped amorphous silicon layer (42), a first intermediate amorphous silicon layer (44) separating every two adjacent ones of the lightly-doped amorphous silicon layers (43), and a second intermediate amorphous silicon layer (45) separating the N-type heavily-doped amorphous silicon layer (42) from the one of the lightly-doped amorphous silicon layers (43) that is closest to the N-type heavily-doped amorphous silicon layer (42). Such a structure further reduces the energy barrier between the drain electrode and the semiconductor layer, making injection of electron easier and ensuring the ON-state current is not lowered down and also helping increase the barrier for trans…