Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
US9741921B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Nov 16, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Nov 16, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC21D2201/03
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.