Patent · US Active

SpinRAM

US9741923B2 · kind B2 · utility

3Cited by
71References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2016
Grant dateAug 22, 2017
Priority date—
Expiry dateSep 21, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/1673
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.