Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US9741926B1 · kind B1 · utility
88Cited by
115References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | May 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.