Magnetoresistive element and magnetic random access memory

US9741928B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Koji Ueda · Kamakura, JP
• Toshihiko Nagase · Sagamihara, JP
• Kazuya SAWADA · Seoul, KR
• Youngmin EEH · Seongnam-si, KR
• Daisuke Watanabe · Chigasaki, JP
• Hiroaki Yoda · Kawasaki, JP

Key dates

• Filing date: Feb 11, 2016
• Grant date: Aug 22, 2017
• Expiry date: Feb 11, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.