Electronic device for heating an integrated structure, for example an MOS transistor
US9746863B2 · kind B2 · utility
0Cited by
9References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Dec 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.