Method of manufacturing semiconductor device and sputtering apparatus
US9748081B2 · kind B2 · utility
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3References
16Claims
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Key dates
| Filing date | Sep 22, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Sep 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.