Treating copper interconnects
US9748169B1 · kind B1 · utility
15Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Apr 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques relate to treating metallic interconnects of semiconductors. A metallic interconnect is formed in a layer. A metallic cap is disposed on top of the metallic interconnect. Any metallic residue, formed during the disposing of the metallic cap, is converted into insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.