Fin type electrostatic discharge protection device
US9748222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | May 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
A fin type ESD protection device includes at least one first fin, at least one second fin, and at least one gate structure. The first fin is disposed on a semiconductor substrate, and a source contact contacts the first fin. The second fin is disposed on the semiconductor substrate, and a drain contact contacts the second fin. The first fin and the second fin extend in a first direction respectively, and the first fin is separated from the second fin. The gate structure is disposed between the source contact and the drain contact. The first fin is separated from the drain contact, and the second fin is separated from the source contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.