Semiconductor device
US9748231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a first active region formed in the substrate and that includes a first region that has a first width and a second region including a second width larger than the first width and extended in a first direction; a second active region formed in the substrate and extended in parallel to the second region of the first active region; and an element isolation insulating film formed in the substrate and that partitions the first active region and the second active region, respectively, wherein the second region of the first active region or the second active region includes a depressed part depressed in a second direction that is perpendicular to the first direction in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.