Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate
US9748254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jan 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines and an insulating layer that is provided between the first bit lines and in a groove. First faces of the first bit lines are aligned on a first line and second faces of the first bit lines are aligned on a second line. A first face of the insulating layer is disposed at a third line that is a first distance from the first line in a first direction and a second face of the insulating layer is disposed at a fourth line that is a second distance from the second line in a second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.