Manufacturing method of semiconductor device
US9748360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention makes it possible to improve the reliability of a semiconductor device.In a manufacturing method of a semiconductor device according to an embodiment, when a resist pattern is formed over a cap insulating film comprising a silicon nitride film, the resist pattern is formed through the processes of coating, exposure, and development treatment of a chemical amplification type resist. Then the chemical amplification type resist is applied so as to directly touch the surface of the cap insulating film comprising the silicon nitride film and organic acid pretreatment is applied to the surface of the cap insulating film comprising the silicon nitride film before the coating of the chemical amplification type resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.