Method for fabricating three dimensional device
US9748364B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a three dimensional device. The method may include directing ions to an end surface of an extension region of a fin structure, the fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein the ions have trajectories extending in a plane perpendicular to the substrate plane and parallel to the fin axis, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the end surface is not covered by the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.