Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate
US9748369B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/184
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor is supported by a substrate including a semiconductor layer overlying an insulating layer. A transistor base is formed by a base region in the semiconductor layer that is doped with a first conductivity type dopant at a first dopant concentration. The transistor emitter and collector are formed by regions doped with a second conductivity type dopant and located adjacent opposite sides of the base region. An extrinsic base includes an epitaxial semiconductor layer in contact with a top surface of the base region. The epitaxial semiconductor layer is doped with the first conductivity type dopant at a second dopant concentration greater than the first dopant concentration. Sidewall spacers on each side of the extrinsic base include an oxide liner on a side of the epitaxial semiconductor layer and the top surface of the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.