N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device
US9748410B2 · kind B2 · utility
11Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Oct 15, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm−3 and a dislocation density of 106 cm−2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.