Patent · US Active

Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer

US9748477B2 · kind B2 · utility

2Cited by

0References

10Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gabriel Molas · Grenoble, FR
Marinela Barci · Casalborgone, IT

Key dates

Filing date	Oct 15, 2015
Grant date	Aug 29, 2017
Priority date	—
Expiry date	Oct 15, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8416
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A resistive random access memory device includes a first electrode; a solid metal oxide electrolyte; and a second electrode, the first and second electrodes being respectively arranged on either side of the solid metal oxide electrolyte, the second electrode being capable of supplying mobile ions circulating in the solid metal oxide electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a potential difference is applied between the first and second electrodes. The device further includes an interface layer including a metal oxide, the interface layer extending at least partially onto the first electrode, the solid metal oxide electrolyte extending at least partially onto the interface layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.