Patent · US Active

Seeded silicon carbide for devices and panels

US9751770B2 · kind B2 · utility

0Cited by
1References
19Claims
0Family size

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Key dates

Filing dateApr 9, 2014
Grant dateSep 5, 2017
Priority date
Expiry dateJul 7, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02C7/022
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Seeded silicon carbide (SiC) for devices and panels are disclosed. In one example embodiment, a device includes a housing and a window. Further, the window is attached to the housing. In this example embodiment, the window of the device is fabricated using the seeded SiC having a single crystalline structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.