Semiconductor manufacturing method
US9754781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma CVD. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film. The semiconductor manufacturing method includes selectively removing the second film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.