Method of fabricating semiconductor device and computing system for implementing the method
US9754789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are method of fabricating semiconductor device and computing system for implementing the method. The method of fabricating a semiconductor device includes forming a target layer, forming a first mask on the target layer to expose a first region, subsequently forming a second mask on the target layer to expose a second region separated from the first region in a first direction, subsequently forming a third mask in the exposed first region to divide the first region into a first sub region and a second sub region separated from each other in a second direction intersecting the first direction, and etching the target layer using the first through third masks such that the first and second sub regions and the second region are defined in the target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.