Substrate including selectively formed barrier layer
US9754823B2 · kind B2 · utility
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11References
10Claims
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Key dates
| Filing date | May 28, 2014 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | May 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13687
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.