Semiconductor device and fabrication method thereof
US9754827B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.