Inventor · Hsinchu, TW

Szu-Yu Wang

44Patents
8h-index
31Co-inventors
71Inventor score

Filing activity: Jun 1, 2004 → Jul 21, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7060594B2 Memory device and method of manufacturing including deuterated oxynitride charge trapping structure Emerging Cross-Sectional Technologies 44 Expired
US7463530B2 Operating method of non-volatile memory device Electricity 39 Active
US7879738B2 Charge trapping dielectric structure for non-volatile memory Electricity 34 Active
US7688626B2 Depletion mode bandgap engineered memory Electricity 32 Active
US7642585B2 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays Electricity 31 Active
US8315095B2 Multi-gate bandgap engineered memory Electricity 30 Active
US8264028B2 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays Physics 29 Expired
US9209190B2 Deep trench capacitor Electricity 12 Active
US9184041B2 Integrated circuit with backside structures to reduce substrate warp Electricity 8 Active
US7405125B2 Tunnel oxynitride in flash memories Electricity 5 Expired
US7772072B2 Method for manufacturing non-volatile memory Electricity 4 Active
US10833026B2 Integrated circuit with backside structures to reduce substrate warp Electricity 3 Active
US10276513B2 Integrated circuit with backside structures to reduce substrate warp Electricity 3 Active
US8094497B2 Multi-gate bandgap engineered memory Electricity 3 Active
US9754827B1 Semiconductor device and fabrication method thereof Electricity 3 Active
US7529137B2 Methods of operating bandgap engineered memory Physics 3 Active
US9646938B2 Integrated circuit with backside structures to reduce substrate warp Electricity 3 Active
US9281203B2 Silicon dot formation by direct self-assembly method for flash memory Electricity 2 Active
US8730726B2 Multi-gate bandgap engineered memory Electricity 2 Active
US9401434B2 E-flash cell band engineering for erasing speed enhancement Electricity 2 Active
US10497860B2 Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method Physics 2 Active
US9871095B2 Stacked capacitor with enhanced capacitance and method of manufacturing the same Electricity 2 Active
US10276678B2 Semiconductor device and fabrication method thereof Electricity 1 Active
US9755860B2 Method of performing uplink channel estimation and base station using the same Electricity 1 Active
US9385136B2 Silicon dot formation by self-assembly method and selective silicon growth for flash memory Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.