Patent · US Active

Redistribution layer contacting first wafer through second wafer

US9754860B2 · kind B2 · utility

3Cited by

35References

3Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Stuart B. Molin · Carlsbad, US
Michael A. Stuber · Carlsbad, US
Mark Drucker · Poway, US

Key dates

Filing date	Jul 8, 2014
Grant date	Sep 5, 2017
Priority date	—
Expiry date	Jul 8, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/13
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure is formed with first and second semiconductor wafers and a redistribution layer. The first semiconductor wafer is formed with a first active layer and a first interconnect layer. The second semiconductor wafer is formed with a second active layer and a second interconnect layer. The second semiconductor wafer is inverted and bonded to the first semiconductor wafer, and a substrate is removed from the second semiconductor wafer. The redistribution layer redistributes electrical connective pad locations on a side of the second semiconductor wafer. The redistribution layer also electrically contacts the first interconnect layer through a hole in the second active layer and the second interconnect layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.