Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device
US9755042B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.