Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
US9755111B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 4, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Dec 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y≧0, x>0) crystal as the mother crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.