Multilayered magnetic thin film stack and nonvolatile memory device having the same
US9755140B2 · kind B2 · utility
13Cited by
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18Claims
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Key dates
| Filing date | May 12, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.