Electroplating methods for semiconductor substrates
US9758893B2 · kind B2 · utility
0Cited by
8References
15Claims
0Family size
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Key dates
| Filing date | Mar 21, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 20, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D5/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.