Patent · US Active

Forming cobalt interconnections on a substrate

US9758896B2 · kind B2 · utility

0Cited by

11References

8Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Roey Shaviv · Palo Alto, US
John W. Lam · San Jose, US
Timothy Bochman · Kalispell, US

Key dates

Filing date	Feb 12, 2015
Grant date	Sep 12, 2017
Priority date	—
Expiry date	Dec 10, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53209
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.