Patent · US Active

MTP-thyristor memory cell circuits and methods of operation

US9761295B2 · kind B2 · utility

4Cited by
8References
45Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 30, 2016
Grant dateSep 12, 2017
Priority date
Expiry dateSep 30, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/131
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An MTP (Many Times Programmable) memory cell for integrated circuit memory arrays is described. The cell includes an MTP device and a thyristor interconnected so that the MTP device triggers the thyristor to turn on during a Read or Verify operation. The difference in threshold voltages between a data memory cell and a reference memory cell is used to determine the information in the data memory cell. Different memory cell structures may be constructed for different memory array requirements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.