Method of manufacturing semiconductor device and substrate processing apparatus
US9761456B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45529
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.