Semiconductor device and semiconductor device manufacturing method
US9761463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.