Semiconductor structure and method of forming the same
US9761494B2 · kind B2 · utility
0Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | May 7, 2012 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | May 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a gate structure disposed on a substrate. At least one lightly doped region adjoins the gate structure in the substrate. The at least one lightly doped region has a first conductivity type. A source feature and a drain feature are on opposite sides of the gate structure in the substrate. The source feature and the drain feature have the first conductivity type. The source feature is in the at least one lightly doped region. A bulk pick-up region adjoins the source feature in the at least one lightly doped region. The bulk pick-up region has a second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.