One-time programming device and a semiconductor device
US9761595B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2013 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Feb 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A one-time programming device includes a field effect semiconductor transistor with a gate or a channel region of the field effect semiconductor transistor including a shape of a footprint so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of the channel region, a bulk region or a drain region of the field effect semiconductor transistor due to the shape of the footprint resulting in a damage of a p-n junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor or resulting in a damage of a gate insulation of the field effect semiconductor transistor after a predetermined programming time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.