Pixels for high performance image sensor

US9761624B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Sergey Velichko · Boise, US
• Victor Lenchenkov · Sunnyvale, US
• Irfan Rahim · Milpitas, US

Key dates

• Filing date: Jun 6, 2016
• Grant date: Sep 12, 2017
• Expiry date: Jun 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

Visual and near infrared pixels may have deep photodiodes to ensure sufficient capture of light. The pixels may have a silicon layer that is etched to form a microlens for the pixel. The pixels may include an inversion layer formed over the silicon layer to prevent dark current. Additionally, the pixels may include a conductive layer formed over the inversion layer that further prevents dark current. The conductive layer may be coupled to a bias voltage supply line. The conductive layer may be biased during image acquisition to prevent dark current. During readout, the bias voltage may be pulsed at a lower voltage to ensure all of the collected charge is transferred out of the photodiode during charge transfer.