Image sensors including semiconductor channel patterns
US9761636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
Abstract
The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.