Manufacturable spin and spin-polaron interconnects
US9761660B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jan 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Manufacturable spin and spin-polaron interconnects are disclosed that do not exhibit the same increase in resistivity shown by Cu interconnects associated with decreasing linewidth. These interconnects rely on the transmission of spin as opposed to charge. Two types of graphene based interconnect approaches are explored, one involving the injection and diffusive transport of discrete spin-polarized carriers, and the other involving coherent spin polarization of graphene charge carriers due to exchange interactions with localized substrate spins. Such devices are manufacturable as well as scalable (methods for their fabrication exist, and the interconnects are based on direct growth, rather than physical transfer or metal catalyst formation). Performance at or above 300 K, as opposed to cryogenic temperatures, is the performance criteria.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.