Resistive field structures for semiconductor devices and uses therof
US9761675B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jan 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.