Method of fabricating semiconductor device with tilted preamorphized implant
US9761688B2 · kind B2 · utility
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3References
19Claims
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Key dates
| Filing date | Jun 16, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device may include: preparing a semiconductor substrate including a doping region; performing tilt implantation using a first additional dopant to form an amorphous region in the doping region; doping a second additional dopant in the amorphous region; forming a metal layer on the doped amorphous region; and reacting the doped amorphous region with the metal layer to form metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.