Method of forming a semiconductor device and according semiconductor device

US9761689B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Dominic Thurmer · Dresden, DE
• Hans-Juergen Thees · Dresden, DE
• Kai Frohberg · Meißen, DE
• Peter Moll · Dresden, DE
• Heike Scholz · Darmstadt, DE

Key dates

• Filing date: Sep 12, 2014
• Grant date: Sep 12, 2017
• Expiry date: Oct 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is avoided and silicide overhang is suppressed. In some aspects of the present disclosure, a method of forming a semiconductor device is provided wherein a gate structure is provided over an active region of a semiconductor substrate, the gate structure including a gate electrode material and sidewall spacers. At least one of the gate electrode material and the sidewall spacers are shaped by applying a shaping process to the gate structure and a silicide portion is formed on the shaped gate structure.