Self-aligned trench MOSFET and method of manufacture

US9761696B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Jian Li · Beijing, CN
• Kuo-In Chen · Los Altos, US
• Kyle Terril · Santa Clara, US

Key dates

• Filing date: Mar 20, 2014
• Grant date: Sep 12, 2017
• Expiry date: Mar 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/663

Abstract

A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. The MOSFET also includes a plurality of body contact regions disposed in the each body region adjacent the plurality of source regions, a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, a source/body contact disposed above the source/body contact spacers, and a plurality of source/body contact, plugs disposed between the source/body contact spacers and coupling the source/body contact to the plurality of body contact regions and the plurality of source regions.