Wide bandgap semiconductor device with adjustable voltage level
US9761703B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/6875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wide bandgap semiconductor device with an adjustable voltage level includes a wide bandgap semiconductor power unit and a level adjusting unit. The wide bandgap semiconductor power unit includes a source terminal, to which the level adjusting unit is electrically connected. The level adjusting unit provides a level shift voltage via the source terminal to adjust a driving voltage level of the wide bandgap semiconductor power unit. By adjusting the driving voltage level of the wide bandgap semiconductor power unit using the level adjusting unit, the wide bandgap semiconductor device may serve as a high-voltage enhancement-mode transistor to achieve reduced costs and an increased switching speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.