SiC trench transistor and method for its manufacture

US9761706B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ning Qu · Beijing, CN
• Thomas Jacke · Lörrach, DE
• Michael Grieb · Renningen, DE
• Martin Rambach · Neckartenzlingen, DE

Key dates

• Filing date: Nov 21, 2014
• Grant date: Sep 12, 2017
• Expiry date: Nov 21, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.