Method of producing a semiconductor layer sequence and an optoelectronic semiconductor component

US9761755B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Werner Bergbauer · Windberg, DE
• Philipp Drechsel · Regensburg, DE

Key dates

• Filing date: Feb 24, 2015
• Grant date: Sep 12, 2017
• Expiry date: Feb 24, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

A method of producing a semiconductor layer sequence includes providing a growth substrate having a growth surface on a growth side, growing a first nitride semiconductor layer on the growth side, growing a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer includes at least one opening or at least one opening is produced in the second nitride semiconductor layer or at least one opening is created in the second nitride semiconductor layer during the growing process, removing at least one part of the first nitride semiconductor layer through the openings in the second nitride semiconductor layer, and growing a third nitride semiconductor layer on the second nitride semiconductor layer, wherein the third nitride semiconductor layer covers the openings at least in places.