Magnetic random access memory devices and methods of manufacturing the same
US9761792B2 · kind B2 · utility
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Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.