Method and processing apparatus for fabricating a magnetic resistive random access memory device
US9761795B2 · kind B2 · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Dec 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.